IKW08T120FKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IKW08T120FKSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
26 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C TJ
Packaging
Tube
Published
2007
Series
TrenchStop®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Power Dissipation
70W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
70W
Case Connection
COLLECTOR
Input Type
Standard
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
1.2kV
Max Collector Current
16A
Reverse Recovery Time
80 ns
JEDEC-95 Code
TO-247AC
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Turn On Time
66 ns
Test Condition
600V, 8A, 81 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.2V @ 15V, 8A
Turn Off Time-Nom (toff)
710 ns
IGBT Type
NPT, Trench Field Stop
Gate Charge
53nC
Current - Collector Pulsed (Icm)
24A
Td (on/off) @ 25°C
40ns/450ns
Switching Energy
1.37mJ
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.212008
$2.212008
10
$2.086800
$20.868
100
$1.968679
$196.8679
500
$1.857245
$928.6225
1000
$1.752118
$1752.118
IKW08T120FKSA1 Product Details
IKW08T120FKSA1 Description
IKW08T120FKSA1 transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IKW08T120FKSA1 MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies IKW08T120FKSA1 has the common source configuration.