STGB20V60F Description

An IGBT called the STGB20V60F was created employing a cutting-edge, proprietary trench gate and field stop construction. The item belongs to the "V" family of IGBTs, which offer the best conduction and switching loss trade-offs for maximizing the efficiency of very high frequency converters. Additionally, safer paralleling operation is produced by a positive VCE(sat)temperature coefficient and a very narrow parameter distribution.

STGB20V60F Features

• Safe paralleling

• Tail-less switching off

• Low thermal resistance

• Tight parameters distribution

• Very high speed switching series

• Maximum junction temperature: TJ = 175 °C

• Lead Low saturation voltage: VCE(sat) = 1.8 V (typ.) @ IC = 20 Afree package

STGB20V60F Applications

• Automotive

• Enterprise systems

• Personal electronics