STGW15M120DF3 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website
SOT-23
STGW15M120DF3 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
30 Weeks
Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Weight
38.000013g
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Max Power Dissipation
259W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STGW15
Element Configuration
Single
Input Type
Standard
Power - Max
259W
Collector Emitter Voltage (VCEO)
1.2kV
Max Collector Current
30A
Reverse Recovery Time
270 ns
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Collector Emitter Saturation Voltage
1.85V
Test Condition
600V, 15A, 22 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.3V @ 15V, 15A
IGBT Type
Trench Field Stop
Gate Charge
226nC
Current - Collector Pulsed (Icm)
60A
Td (on/off) @ 25°C
26ns/122ns
Switching Energy
550μJ (on), 850μJ (off)
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$29.818640
$29.81864
10
$28.130792
$281.30792
100
$26.538483
$2653.8483
500
$25.036305
$12518.1525
1000
$23.619156
$23619.156
STGW15M120DF3 Product Details
STGW15M120DF3 Description
STGW15M120DF3 transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes STGW15M120DF3 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.