IKW40N65ES5XKSA1 Description

The IKW40N65ES5XKSA1 is a TRENCHSTOP™ 5 high-speed soft switching IGBT copacked with a full current rated RAPID 1 fast and soft antiparallel diode. The BJT and MOSFET are combined to form the IGBT or Insulated Gate Bipolar Transistor. Its name also alluded to their union. The term "Insulated Gate" describes a MOSFET's extremely high input impedance. It relies on the voltage at its gate terminal to operate rather than drawing any input current. When a BJT's output portion is described as "bipolar," it means that both different types of charge carriers contribute to the current flow. It enables it to operate with extremely high currents and voltages while utilizing low-voltage signals. The IGBT is a voltage-controlled device as a result of this hybrid arrangement.

IKW40N65ES5XKSA1 Features

• IGBT copacked with full rated RAPID 1 fast antiparallel diode

• Maximum junction temperature 175°C

• Qualified according to JEDEC for target applications

• Pb-free lead plating; RoHS compliant

• High speed smooth switching device for hard & soft switching

• Very Low VCEsat, 1.35V at nominal current

• Plug and play replacement of previous generation IGBTs

• 650V breakdown voltage

• Low gate charge QG

IKW40N65ES5XKSA1 Applications

• Welding converters

• Mid to high range switching frequency converters

• Resonant converters

• Uninterruptible power supplies