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IXXX110N65B4H1

  • IXXX110N65B4H1
  • IXXX110N65B4H1

IXXX110N65B4H1

IXXX110N65B4H1

IXYS

IGBT Transistors 650V/240A TRENCH IGBT GENX4 XPT

SOT-23

IXXX110N65B4H1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 18 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2013
Series GenX4™, XPT™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 880W
Reach Compliance Code not_compliant
Base Part Number 110N65
Element Configuration Single
Power Dissipation 880W
Input Type Standard
Turn On Delay Time 26 ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 146 ns
Collector Emitter Voltage (VCEO) 2.1V
Max Collector Current 240A
Reverse Recovery Time 100 ns
Collector Emitter Breakdown Voltage 650V
Collector Emitter Saturation Voltage 1.75V
Test Condition 400V, 55A, 2 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 110A
IGBT Type PT
Gate Charge 183nC
Current - Collector Pulsed (Icm) 630A
Td (on/off) @ 25°C 38ns/156ns
Switching Energy 2.2mJ (on), 1.05mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $11.62000 $11.62
10 $10.56300 $105.63
30 $9.77067 $293.1201
120 $8.97858 $1077.4296
270 $8.18633 $2210.3091
510 $7.65818 $3905.6718
1,020 $7.04200 $7.042

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