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IKW20N60TFKSA1

IKW20N60TFKSA1

IKW20N60TFKSA1

Infineon Technologies

IKW20N60TFKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IKW20N60TFKSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Transistor Element Material SILICON
Packaging Tube
Published 2008
Series TrenchStop®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number *KW20N60
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Operating Temperature (Max) 175°C
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Power - Max 166W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Reverse Recovery Time 41ns
JEDEC-95 Code TO-247AC
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 40A
Turn On Time 36 ns
Test Condition 400V, 20A, 12 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.05V @ 15V, 20A
Turn Off Time-Nom (toff) 299 ns
IGBT Type Trench Field Stop
Gate Charge 120nC
Current - Collector Pulsed (Icm) 60A
Td (on/off) @ 25°C 18ns/199ns
Switching Energy 770μJ
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $4.21000 $4.21
10 $3.81100 $38.11
240 $3.17121 $761.0904
720 $2.73964 $1972.5408
1,200 $2.35272 $2.35272
IKW20N60TFKSA1 Product Details

IKW20N60TFKSA1 Features

Very low VCE(sat) 1.5V (typ.)

Maximum Junction Temperature 175°C

Short circuit withstand time 5?s

Designed for :

- Frequency Converters

- Uninterrupted Power Supply

TRENCHSTOP? and Fieldstop technology for 600V applications offers :

- very tight parameter distribution

- high ruggedness, temperature stable behavior

- very high switching speed

- low VCE(sat)

Positive temperature coefficient in VCE(sat)

Low EMI

Low Gate Charge

Very soft, fast recovery anti-parallel Emitter Controlled HE diode

Qualified according to JEDEC1

for target applications

Pb-free lead plating; RoHS compliant



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