STGFL6NC60D datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website
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STGFL6NC60D Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
PowerMESH™
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - annealed
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
22W
Base Part Number
STGFL6
Pin Count
3
Number of Elements
1
Element Configuration
Single
Case Connection
ISOLATED
Input Type
Standard
Turn On Delay Time
6.7 ns
Power - Max
22W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
67 ns
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
7A
Reverse Recovery Time
30 ns
JEDEC-95 Code
TO-220AB
Collector Emitter Breakdown Voltage
600V
Turn On Time
10.5 ns
Test Condition
390V, 3A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.9V @ 15V, 3A
Turn Off Time-Nom (toff)
122 ns
Gate Charge
12nC
Current - Collector Pulsed (Icm)
25A
Td (on/off) @ 25°C
6.7ns/46ns
Switching Energy
46.5μJ (on), 23.5μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
5.75V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.73000
$1.73
10
$1.55000
$15.5
100
$1.24570
$124.57
STGFL6NC60D Product Details
STGFL6NC60D Description
Based on PowerMESH technology and thanks to a new lifetime control system, this new series exhibits very low turn-off energy realizing the best trade-off between on-state voltage and switching losses and so allowing very high operating Frequencies.
STGFL6NC60D Features
■ Low CRES / CIES ratio (no cross-conduction
susceptibility)
■ Very soft ultra fast recovery antiparallel diode