Name: STGFL6NC60D
Brand: STMicroelectronics
SKU: STGFL6NC60D
Price: 1.64000 USD
Availability: InStock

new-10%

STGFL6NC60D

Manufacturer part number:STGFL6NC60D

Manufacturer:STMicroelectronics

Description:STGFL6NC60D datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGFL6NC60D Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	PowerMESH™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - annealed
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	22W
Base Part Number	STGFL6
Pin Count	3
Number of Elements	1
Element Configuration	Single
Case Connection	ISOLATED
Input Type	Standard
Turn On Delay Time	6.7 ns
Power - Max	22W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	67 ns
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	7A
Reverse Recovery Time	30 ns
JEDEC-95 Code	TO-220AB
Collector Emitter Breakdown Voltage	600V
Turn On Time	10.5 ns
Test Condition	390V, 3A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.9V @ 15V, 3A
Turn Off Time-Nom (toff)	122 ns
Gate Charge	12nC
Current - Collector Pulsed (Icm)	25A
Td (on/off) @ 25°C	6.7ns/46ns
Switching Energy	46.5μJ (on), 23.5μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.75V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

STGFL6NC60D Product Details

STGFL6NC60D Description

Based on PowerMESH technology and thanks to a new lifetime control system, this new series exhibits very low turn-off energy realizing the best trade-off between on-state voltage and switching losses and so allowing very high operating Frequencies.