STGWA15H120DF2 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website
SOT-23
STGWA15H120DF2 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
32 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
259W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STGWA15
Input Type
Standard
Power - Max
259W
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
2.6V
Max Collector Current
30A
Reverse Recovery Time
231 ns
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Test Condition
600V, 15A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.6V @ 15V, 15A
IGBT Type
Trench Field Stop
Gate Charge
67nC
Current - Collector Pulsed (Icm)
60A
Td (on/off) @ 25°C
23ns/111ns
Switching Energy
380μJ (on), 370μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
7V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$7.53000
$7.53
30
$6.55900
$196.77
120
$5.76517
$691.8204
510
$5.08900
$2595.39
1,020
$4.50100
$4.501
2,520
$4.45200
$8.904
STGWA15H120DF2 Product Details
STGWA15H120DF2 Description
STGWA15H120DF2, a part of the new HB series of IGBTs, is a type of IGBT developed by STMicroelectronics based on an advanced proprietary trench gate field-stop structure. It ensures extremely low conduction and switching losses to maximize the efficiency of very high-frequency converters. A safer paralleling operation can be provided based on a positive VCE(sat) temperature coefficient and very tight parameter distribution. The STGWA15H120DF2 IGBT is embedded in the TO-247 package for the purpose of saving board space.