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STGWA40HP65FB2

  • STGWA40HP65FB2
  • STGWA40HP65FB2

STGWA40HP65FB2

STGWA40HP65FB2

STMicroelectronics

STGWA40HP65FB2 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

SOT-23

STGWA40HP65FB2 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 30 Weeks
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature -55°C~175°C TJ
Series HB2
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Input Type Standard
Power - Max 227W
Reverse Recovery Time 140ns
Voltage - Collector Emitter Breakdown (Max) 650V
Current - Collector (Ic) (Max) 72A
Test Condition 400V, 40A, 4.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 40A
IGBT Type Trench Field Stop
Gate Charge 153nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C -/125ns
Switching Energy 410μJ (off)
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $4.19000 $4.19
500 $4.1481 $2074.05
1000 $4.1062 $4106.2
1500 $4.0643 $6096.45
2000 $4.0224 $8044.8
2500 $3.9805 $9951.25
STGWA40HP65FB2 Product Details

STGWA40HP65FB2 Description


The STGWA40HP65FB2 from STMicroelectronics' newest IGBT 650 V HB2 series is an advancement of the advanced patented trench gate field-stop construction. The HB2 series' performance is optimized in terms of conduction, thanks to improved VCE(sat) behaviour at low current values, as well as reduced switching energy. A diode used solely for safety is co-packaged antiparallel with the IGBT.



STGWA40HP65FB2 Features


  • Tight parameter distribution

  • Low thermal resistance

  • Positive VCE(sat) temperature coefficient

  • Maximum junction temperature : TJ = 175 °C

  • Low VCE(sat) = 1.55 V(typ.) @ IC = 40 A

  • Co-packaged protection diode

  • Minimized tail current



STGWA40HP65FB2 Applications


  • Power factor correction

  • Welding

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