IKW30N60H3FKSA1

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Manufacturer part number:IKW30N60H3FKSA1

Manufacturer:Infineon Technologies

Description:IKW30N60H3FKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IKW30N60H3FKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-40°C~175°C TJ
Packaging	Tube
Published	2005
Series	TrenchStop®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Max Power Dissipation	187W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	*KW30N60
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Input Type	Standard
Power - Max	187W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	60A
Reverse Recovery Time	38 ns
Collector Emitter Breakdown Voltage	600V
Turn On Time	50 ns
Test Condition	400V, 30A, 10.5 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 30A
Turn Off Time-Nom (toff)	262 ns
IGBT Type	Trench Field Stop
Gate Charge	165nC
Current - Collector Pulsed (Icm)	120A
Td (on/off) @ 25°C	21ns/207ns
Switching Energy	1.38mJ
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

Quantity	Unit Price	Ext. Price
1	$1.144037	$1.144037
10	$1.079280	$10.7928
100	$1.018189	$101.8189
500	$0.960555	$480.2775
1000	$0.906184	$906.184

IKW30N60H3FKSA1 Description

The IKW30N60H3FKSA1 is a High-speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode. The BJT and MOSFET are combined to form the IGBT or Insulated Gate Bipolar Transistor. Its name also alluded to their union. The term "Insulated Gate" describes a MOSFET's extremely high input impedance. It relies on the voltage at its gate terminal to operate rather than drawing any input current. When a BJT's output portion is described as "bipolar," it means that both different types of charge carriers contribute to the current flow. It enables it to operate with extremely high currents and voltages while utilizing low voltage signals. The IGBT is a voltage-controlled device as a result of this hybrid arrangement.