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STGW40H65DFB

  • STGW40H65DFB
  • STGW40H65DFB

STGW40H65DFB

STGW40H65DFB

STMicroelectronics

STGW40H65DFB datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

SOT-23

STGW40H65DFB Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 38.000013g
Operating Temperature -55°C~175°C TJ
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 283W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STGW40
Element Configuration Single
Input Type Standard
Power - Max 283W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 650V
Max Collector Current 80A
Reverse Recovery Time 62 ns
Collector Emitter Breakdown Voltage 650V
Collector Emitter Saturation Voltage 1.8V
Test Condition 400V, 40A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 40A
IGBT Type Trench Field Stop
Gate Charge 210nC
Current - Collector Pulsed (Icm) 160A
Td (on/off) @ 25°C 40ns/142ns
Switching Energy 498μJ (on), 363μJ (off)
Gate-Emitter Voltage-Max 20V
Height 20.15mm
Length 15.75mm
Width 5.15mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $9.174240 $9.17424
10 $8.654943 $86.54943
100 $8.165041 $816.5041
500 $7.702869 $3851.4345
1000 $7.266857 $7266.857
STGW40H65DFB Product Details

STGW40H65DFB Description

The STGW40H65DFB is an IGBT that was created with a patented trench gate field stop construction. The STGW40H65DFB is part of the new HB series of IGBTs, which offers the best balance of conduction and switching loss for maximum frequency converter efficiency. In addition, the slightly positive VCE(sat) temperature coefficient and extremely tight parameter distribution make paralleling safer.


STGW40H65DFB Features

  • Maximum junction temperature: TJ = 175 °C

  • High-speed switching series

  • Minimized tail current

  • Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A

  • Tight parameter distribution

  • Safe paralleling

  • Positive VCE(sat) temperature coefficient

  • Low thermal resistance

  • Very fast soft recovery antiparallel diode


STGW40H65DFB Applications

  • Photovoltaic inverters

  • High-frequency converters


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