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IXYJ20N120C3D1

IXYJ20N120C3D1

IXYJ20N120C3D1

IXYS

IGBT Transistors XPT 1200V IGBT GenX7 XPT IGBT

SOT-23

IXYJ20N120C3D1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 24 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
Series GenX3™, XPT™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 105W
Reach Compliance Code unknown
Base Part Number IXY*20N120
Element Configuration Single
Power Dissipation 105W
Input Type Standard
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 21A
Reverse Recovery Time 195 ns
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 4V
Test Condition 600V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.4V @ 15V, 20A
Gate Charge 53nC
Current - Collector Pulsed (Icm) 84A
Td (on/off) @ 25°C 20ns/90ns
Switching Energy 1.3mJ (on), 500μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Height 21.34mm
Length 16.13mm
Width 5.21mm
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $12.31000 $12.31
10 $11.19300 $111.93
30 $10.35367 $310.6101
120 $9.51408 $1141.6896
270 $8.67459 $2342.1393
510 $8.11492 $4138.6092
1,020 $7.46200 $7.462

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