IKW50N60DTPXKSA1

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Manufacturer part number:IKW50N60DTPXKSA1

Manufacturer:Infineon Technologies

Description:IKW50N60DTPXKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IKW50N60DTPXKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Operating Temperature	-40°C~175°C TJ
Packaging	Tube
Published	2016
Series	TrenchStop™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	Not Applicable
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Max Power Dissipation	319.2W
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Input Type	Standard
Power - Max	319.2W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.8V
Max Collector Current	80A
Reverse Recovery Time	115 ns
Collector Emitter Breakdown Voltage	600V
Turn On Time	55 ns
Test Condition	400V, 50A, 7 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.8V @ 15V, 50A
Turn Off Time-Nom (toff)	332 ns
IGBT Type	Trench Field Stop
Gate Charge	249nC
Current - Collector Pulsed (Icm)	150A
Td (on/off) @ 25°C	20ns/215ns
Switching Energy	1.53mJ (on), 850μJ (off)
RoHS Status	ROHS3 Compliant