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IXGP30N120B3

  • IXGP30N120B3
  • IXGP30N120B3

IXGP30N120B3

IXGP30N120B3

IXYS

IXGP30N120B3 datasheet pdf and Transistors - IGBTs - Single product details from IXYS stock available on our website

SOT-23

IXGP30N120B3 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 26 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 2.299997g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2009
Series GenX3™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 300W
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*30N120
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Input Type Standard
Power - Max 300W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 3.5V
Max Collector Current 60A
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 3.5V
Turn On Time 56 ns
Test Condition 960V, 30A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.5V @ 15V, 30A
Turn Off Time-Nom (toff) 471 ns
IGBT Type PT
Gate Charge 87nC
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 16ns/127ns
Switching Energy 3.47mJ (on), 2.16mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $6.62000 $6.62
10 $5.90600 $59.06
50 $5.31560 $265.78
100 $4.84310 $484.31
250 $4.37064 $1092.66
500 $3.92176 $1960.88
1,000 $3.30750 $3.3075
2,500 $3.15000 $6.3
IXGP30N120B3 Product Details

IXGP30N120B3                                  Description

PT IGBTs, which are fabricated using epitaxial wafers, have a thick p+ collector region with high dopant concentration. In the conducting state, large amounts of carriers are injected from the collector to achieve conductivity modulation and thereby reduce the on-state voltage.


IXGP30N120B3                                    Applications

• PLC analog input modules

• Weigh scales and strain-gauge digitizers

• Temperature, pressure measurement

• Lab instrumentation

• Process analytics


IXGP30N120B3                                Features 

• High input voltage (AC187 - 528V)

• Peak load possible

FCA50F, FCA75F (at AC240 - 528V)

FCA200F (at AC323 - 528V)

• Harmonic attenuator (Complies with IEC61000-3-2) (FCA200F)

• DIN rail attachment (Optional)

• Small size       


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