IXGP30N120B3                                  Description

PT IGBTs, which are fabricated using epitaxial wafers, have a thick p+ collector region with high dopant concentration. In the conducting state, large amounts of carriers are injected from the collector to achieve conductivity modulation and thereby reduce the on-state voltage.

IXGP30N120B3                                    Applications

• PLC analog input modules

• Weigh scales and strain-gauge digitizers

• Temperature, pressure measurement

• Lab instrumentation

• Process analytics

IXGP30N120B3                                Features 

• High input voltage (AC187 - 528V)

• Peak load possible

FCA50F, FCA75F (at AC240 - 528V)

FCA200F (at AC323 - 528V)

• Harmonic attenuator (Complies with IEC61000-3-2) (FCA200F)

• DIN rail attachment (Optional)

• Small size