IXGA20N120B3

new-10%

Manufacturer part number:IXGA20N120B3

Manufacturer:IXYS

Description:Trans IGBT Chip N-CH 1.2KV 36A 3-Pin(2+Tab) TO-263

Case Package:SOT-23

Datasheet:IXGA20N120B3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	30 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2009
Series	GenX3™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	PURE TIN
Additional Feature	LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	180W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	180W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	3.1V
Max Collector Current	36A
JEDEC-95 Code	TO-263AA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Turn On Time	61 ns
Test Condition	600V, 16A, 15 Ω, 15V
Vce(on) (Max) @ Vge, Ic	3.1V @ 15V, 16A
Turn Off Time-Nom (toff)	720 ns
IGBT Type	PT
Gate Charge	51nC
Current - Collector Pulsed (Icm)	80A
Td (on/off) @ 25°C	16ns/150ns
Switching Energy	920μJ (on), 560μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
RoHS Status	ROHS3 Compliant