Welcome to Hotenda.com Online Store!

logo
userjoin
Home

IKW50N60TFKSA1

IKW50N60TFKSA1

IKW50N60TFKSA1

Infineon Technologies

IKW50N60TFKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IKW50N60TFKSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 26 Weeks
Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2006
Series TrenchStop®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Power - Max 333W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Reverse Recovery Time 143ns
JEDEC-95 Code TO-247AC
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 80A
Turn On Time 60 ns
Test Condition 400V, 50A, 7 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 50A
Turn Off Time-Nom (toff) 396 ns
IGBT Type Trench Field Stop
Gate Charge 310nC
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 26ns/299ns
Switching Energy 2.6mJ
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $6.743692 $6.743692
10 $6.361974 $63.61974
100 $6.001862 $600.1862
500 $5.662134 $2831.067
1000 $5.341636 $5341.636
IKW50N60TFKSA1 Product Details

IKW50N60TFKSA1 Description


IKW50N60TFKSA1 is a type of IGBT with integrated diode in packages offering space-saving advantage, which is optimized for automotive applications. It is designed based on TRENCHSTOP and Fieldstop technology for 600V applications. The IKW50N60TFKSA1 IGBT is characterized by very tight parameter distribution, short circuit capability of 5μs, a maximum junction temperature of 175°C, and more.



IKW50N60TFKSA1 Features


Very tight parameter distribution

Maximum junction temperature 175°C

Dynamically stress tested

Short circuit capability of 5μs

Very high switching speed



IKW50N60TFKSA1 Applications


Main inverter

Air-Con compressor

PTC heater

Motor drives


Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News