STGWA40S120DF3 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website
SOT-23
STGWA40S120DF3 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
32 Weeks
Lifecycle Status
ACTIVE (Last Updated: 7 months ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Power Dissipation
468W
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STGWA40
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Case Connection
COLLECTOR
Input Type
Standard
Power - Max
468W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
2.15V
Max Collector Current
80A
Reverse Recovery Time
355 ns
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Turn On Time
50 ns
Test Condition
600V, 40A, 15 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.15V @ 15V, 40A
Turn Off Time-Nom (toff)
158.46 ns
IGBT Type
Trench Field Stop
Gate Charge
129nC
Current - Collector Pulsed (Icm)
160A
Td (on/off) @ 25°C
35ns/148ns
Switching Energy
1.43mJ (on), 3.83mJ (off)
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$12.12000
$12.12
30
$10.43967
$313.1901
120
$9.06467
$1087.7604
510
$7.89337
$4025.6187
1,020
$6.87487
$6.87487
STGWA40S120DF3 Product Details
STGWA40S120DF3 Description
STGWA40S120DF3, part of the S series of 1200 V IGBTs, is a type of IGBT developed by STMicroelectronics based on an advanced proprietary trench gate field-stop structure. It is specifically designed to achieve maximal efficiency in low-frequency industrial systems. Due to its positive VCE(sat) temperature coefficient and tight parameter distribution, a safer paralleling operation can be achieved.