IKY40N120CS6XKSA1

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Manufacturer part number:IKY40N120CS6XKSA1

Manufacturer:Infineon Technologies

Description:IKY40N120CS6XKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IKY40N120CS6XKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mounting Type	Through Hole
Package / Case	TO-247-4
Operating Temperature	-40°C~175°C TJ
Packaging	Tube
Series	TrenchStop™
Part Status	Active
Moisture Sensitivity Level (MSL)	Not Applicable
Input Type	Standard
Power - Max	500W
Reverse Recovery Time	255ns
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	80A
Test Condition	600V, 40A, 9 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.15V @ 15V, 40A
IGBT Type	Trench Field Stop
Gate Charge	285nC
Current - Collector Pulsed (Icm)	160A
Td (on/off) @ 25°C	27ns/315ns
Switching Energy	1.45mJ (on), 1.55mJ (off)
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
1	$11.24000	$11.24
10	$10.23200	$102.32
240	$8.60846	$2066.0304
720	$7.59879	$5471.1288
1,200	$6.72080	$6.7208

IKY40N120CS6XKSA1 Description

IKY40N120CS6XKSA1 transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IKY40N120CS6XKSA1 MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies IKY40N120CS6XKSA1 has the common source configuration.

IKY40N120CS6XKSA1 Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

IKY40N120CS6XKSA1 Applications

ISM applications

DC large signal applications

Power factor correction