IXXK200N60C3

new-10%

Manufacturer part number:IXXK200N60C3

Manufacturer:IXYS

Description:IGBT 600V 340A 1630W TO264

Case Package:SOT-23

Datasheet:IXXK200N60C3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	28 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2013
Series	GenX3™, XPT™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Additional Feature	AVALANCHE RATED
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	1.63kW
Reach Compliance Code	unknown
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Element Configuration	Single
Power Dissipation	1.63kW
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	1630W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.1V
Max Collector Current	340A
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.6V
Turn On Time	143 ns
Test Condition	360V, 100A, 1 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 100A
Turn Off Time-Nom (toff)	240 ns
IGBT Type	PT
Gate Charge	315nC
Current - Collector Pulsed (Icm)	900A
Td (on/off) @ 25°C	47ns/125ns
Switching Energy	3mJ (on), 1.7mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
RoHS Status	ROHS3 Compliant