IKW75N65EH5XKSA1                Description

The IGBT combines, in a single device, a control input with a MOS structure and a bipolar power transistor that acts as an output switch. IGBTs are suitable for high-voltage, high-current applications. They are designed to drive high-power applications with a low-power input.

IKW75N65EH5XKSA1                 Features

High speed H5 technology offering

·Best-in-Class efficiency in hard switching and resonant topologies

·Plug and play replacement of previous generation IGBTs·650V breakdown voltage·Low gate charge QG

·GBT copacked with full-rated RAPID 1 fast and soft antiparallel diode

·Maximum junction temperature 175°℃

·Qualified according to JEDEC for target applications·Pb-free lead platingRoHS compliant

·Complete product spectrum and PSpice Models

IKW75N65EH5XKSA1                   Applications

·Uninterruptible power supplies Solar converters·Welding converters

·Mid to high range switching frequency converters