NGTB20N120IHRWG                   Description

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, provides and superior performance in demanding switching applications, and offers low on?state voltage with minimal switching loss. The IGBT is well suited for resonant or soft switching applications.

NGTB20N120IHRWG                  Features

? Extremely Efficient Trench with Fieldstop Technology

? Low Switching Loss Reduces System Power Dissipation

? Optimized for Low Losses in IH Cooker Application

? Reliable and Cost Effective Single Die Solution

? These are Pb?Free Devices

NGTB20N120IHRWG                  Applications

? Inductive Heating

? Consumer Appliances

? Soft Switching