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IKY50N120CH3XKSA1

IKY50N120CH3XKSA1

IKY50N120CH3XKSA1

Infineon Technologies

IKY50N120CH3XKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IKY50N120CH3XKSA1 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mounting Type Through Hole
Package / Case TO-247-4
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 4
ECCN Code EAR99
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Input Type Standard
Power - Max 652W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Reverse Recovery Time 255ns
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 100A
Turn On Time 62 ns
Test Condition 600V, 50A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.35V @ 15V, 50A
Turn Off Time-Nom (toff) 462 ns
Gate Charge 235nC
Current - Collector Pulsed (Icm) 200A
Td (on/off) @ 25°C 32ns/296ns
Switching Energy 2.3mJ (on), 1.9mJ (off)
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $11.584000 $11.584
10 $10.928302 $109.28302
100 $10.309719 $1030.9719
500 $9.726150 $4863.075
1000 $9.175613 $9175.613
IKY50N120CH3XKSA1 Product Details

IKY50N120CH3XKSA1 Description


IKY50N120CH3XKSA1 is a 1200v low switching loss IGBT in Highspeed3 technology co-packed with a soft, fast recovery full current rated anti-parallel Emitter Controlled diode. The Infineon IKY50N120CH3XKSA1 can be applied in industrial UPS, charger, energy storage, and three-level solar string inverter applications due to the following features. The Operating and Storage Temperature Range is between -40 and 150℃. And the transistor IKY50N120CH3XKSA1 is in the PG-TO247-4-2 package with 652W power dissipation.



IKY50N120CH3XKSA1 Features


Ultra-low loss switching losses thanks to Kelvin emitter pin package in combination with High-speed H3 technology

High efficiency in hard switching and resonant topologies

10μsec short circuit withstands time at Tv=175°C.

Easy paralleling capability due to positive temperature coefficient in VCE(sat)

Low EMI

Low Gate Charge Qc

Very soft, fast recovery full current anti-parallel diode

Maximum junction temperature 175°C.

Pb-free lead plating; RoHS compliant



IKY50N120CH3XKSA1 Applications


Industrial UPS

Charger

Energy Storage

Three-level Solar String Inverter


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