IKY50N120CH3XKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IKY50N120CH3XKSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Mounting Type
Through Hole
Package / Case
TO-247-4
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~175°C TJ
Packaging
Tube
Published
2014
Part Status
Active
Moisture Sensitivity Level (MSL)
Not Applicable
Number of Terminations
4
ECCN Code
EAR99
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSFM-T4
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Input Type
Standard
Power - Max
652W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Reverse Recovery Time
255ns
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
100A
Turn On Time
62 ns
Test Condition
600V, 50A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.35V @ 15V, 50A
Turn Off Time-Nom (toff)
462 ns
Gate Charge
235nC
Current - Collector Pulsed (Icm)
200A
Td (on/off) @ 25°C
32ns/296ns
Switching Energy
2.3mJ (on), 1.9mJ (off)
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$11.584000
$11.584
10
$10.928302
$109.28302
100
$10.309719
$1030.9719
500
$9.726150
$4863.075
1000
$9.175613
$9175.613
IKY50N120CH3XKSA1 Product Details
IKY50N120CH3XKSA1 Description
IKY50N120CH3XKSA1 is a 1200v low switching loss IGBT in Highspeed3 technology co-packed with a soft, fast recovery full current rated anti-parallel Emitter Controlled diode. The Infineon IKY50N120CH3XKSA1 can be applied in industrial UPS, charger, energy storage, and three-level solar string inverter applications due to the following features. The Operating and Storage Temperature Range is between -40 and 150℃. And the transistor IKY50N120CH3XKSA1 is in the PG-TO247-4-2 package with 652W power dissipation.
IKY50N120CH3XKSA1 Features
Ultra-low loss switching losses thanks to Kelvin emitter pin package in combination with High-speed H3 technology
High efficiency in hard switching and resonant topologies
10μsec short circuit withstands time at Tv=175°C.
Easy paralleling capability due to positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge Qc
Very soft, fast recovery full current anti-parallel diode