IKZ50N65ES5XKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IKZ50N65ES5XKSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
26 Weeks
Mounting Type
Through Hole
Package / Case
TO-247-4
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~175°C TJ
Packaging
Tube
Published
2014
Series
TrenchStop™ 5
Part Status
Active
Moisture Sensitivity Level (MSL)
Not Applicable
Number of Terminations
4
ECCN Code
EAR99
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSFM-T4
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Input Type
Standard
Power - Max
274W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Reverse Recovery Time
62ns
Voltage - Collector Emitter Breakdown (Max)
650V
Current - Collector (Ic) (Max)
80A
Turn On Time
60 ns
Test Condition
400V, 25A, 23.1 Ω, 15V
Vce(on) (Max) @ Vge, Ic
1.7V @ 15V, 50A
Turn Off Time-Nom (toff)
366 ns
IGBT Type
Trench
Gate Charge
120nC
Current - Collector Pulsed (Icm)
200A
Td (on/off) @ 25°C
36ns/294ns
Switching Energy
770μJ (on), 880μJ (off)
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$5.702000
$5.702
10
$5.379245
$53.79245
100
$5.074760
$507.476
500
$4.787509
$2393.7545
1000
$4.516518
$4516.518
IKZ50N65ES5XKSA1 Product Details
IKZ50N65ES5XKSA1 Description
IKZ50N65ES5XKSA1 is a single IGBT with a Voltage - Collector Emitter Breakdown (Max) of 650V from Infineon Technologies. IKZ50N65ES5XKSA1 operates between -40°C~175°C TJ, and its Current - Collector Cutoff (Max) is 80A. The IKZ50N65ES5XKSA1 has 4 pins and it is available in
Tube packaging way. IKZ50N65ES5XKSA1 has a 650V Voltage - Collector Emitter Breakdown (Max) value.