IRG4RC10SDPBF

new-10%

IRG4RC10SDPBF

Manufacturer part number:IRG4RC10SDPBF

Manufacturer:Infineon Technologies

Description:IRG4RC10SDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRG4RC10SDPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2004
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Termination	SMD/SMT
ECCN Code	EAR99
Terminal Finish	MATTE TIN OVER NICKEL
Additional Feature	LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	38W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	14A
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	IRG4RC10SDPBF
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Element Configuration	Single
Power Dissipation	38W
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	POWER CONTROL
Rise Time	31ns
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.8V
Max Collector Current	14A
Reverse Recovery Time	28 ns
JEDEC-95 Code	TO-252AA
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.7V
Turn On Time	106 ns
Test Condition	480V, 8A, 100 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.8V @ 15V, 8A
Turn Off Time-Nom (toff)	1780 ns
Gate Charge	15nC
Current - Collector Pulsed (Icm)	18A
Td (on/off) @ 25°C	76ns/815ns
Switching Energy	310μJ (on), 3.28mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
Fall Time-Max (tf)	1080ns
Height	1.2446mm
Length	6.7056mm
Width	6.22mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free