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IGB50N65H5ATMA1

  • IGB50N65H5ATMA1
  • IGB50N65H5ATMA1

IGB50N65H5ATMA1

IGB50N65H5ATMA1

Infineon Technologies

IGB50N65H5ATMA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IGB50N65H5ATMA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 26 Weeks
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature -40°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series TrenchStop™ 5
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Input Type Standard
Power - Max 270W
Voltage - Collector Emitter Breakdown (Max) 650V
Current - Collector (Ic) (Max) 80A
Test Condition 400V, 50A, 12 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 50A
IGBT Type Trench Field Stop
Gate Charge 120nC
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 23ns/173ns
Switching Energy 1.59mJ (on), 750μJ (off)
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1,000 $1.91953 $1.91953
2,000 $1.82812 $3.65624
IGB50N65H5ATMA1 Product Details

IGB50N65H5ATMA1 Description


IGB50N65H5ATMA1 is a single IGBT from the manufacturer Infineon Technologies with the Gate Charge of 120nC. The operating temperature of the IGB50N65H5ATMA1 is -40°C~175°C TJ and its maximum power dissipation is 270W. IGB50N65H5ATMA1 has 3 pins and it is available in Tape & Reel (TR) packaging way. The Voltage - Collector Emitter Breakdown (Max) of IGB50N65H5ATMA1 is 650V. 



IGB50N65H5ATMA1 Features


  • High speed H5 technology offering

  • Best-in-Class efficiency in hard switching and resonant topologies

  • 650V breakdown voltage

  • Low QG

  • Maximum junction temperature 175°C

  • Pb-free lead plating;RoHS compliant



IGB50N65H5ATMA1 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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