IRF6655TR1PBF

new-10%

Manufacturer part number:IRF6655TR1PBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 100V 4.2A DIRECTFET

Case Package:SOT-23

Datasheet:IRF6655TR1PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric SH
Number of Pins	5
Supplier Device Package	DIRECTFET™ SH
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	62MOhm
Max Operating Temperature	150°C
Min Operating Temperature	-40°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	2.2W Ta 42W Tc
Element Configuration	Single
Power Dissipation	42W
Turn On Delay Time	7.4 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	62mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	4.8V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds	530pF @ 25V
Current - Continuous Drain (Id) @ 25°C	4.2A Ta 19A Tc
Gate Charge (Qg) (Max) @ Vgs	11.7nC @ 10V
Rise Time	2.8ns
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	4.3 ns
Turn-Off Delay Time	14 ns
Continuous Drain Current (ID)	4.2A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Input Capacitance	530pF
Drain to Source Resistance	53mOhm
Rds On Max	62 mΩ
Nominal Vgs	4 V
Height	506μm
Length	4.826mm
Width	3.95mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant