IPA80R1K2P7XKSA1 Overview

As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 10 mJ.A device's maximum input capacitance is 300pF @ 500V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its maximum pulsed drain current is 11A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 800V.To operate this transistor, you need to apply a 800V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IPA80R1K2P7XKSA1 Features

the avalanche energy rating (Eas) is 10 mJ
based on its rated peak drain current 11A.
a 800V drain to source voltage (Vdss)

IPA80R1K2P7XKSA1 Applications

There are a lot of Infineon Technologies
IPA80R1K2P7XKSA1 applications of single MOSFETs transistors.

• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies
• PFC stages, hard switching PWM stages and resonant switching
• PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
• Lighting, Server, Telecom and UPS.
• DC-to-DC converters