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IPAW60R280P7SXKSA1

IPAW60R280P7SXKSA1

IPAW60R280P7SXKSA1

Infineon Technologies

MOSFET (Metal Oxide) N-Channel Tube 280m Ω @ 3.8A, 10V ±20V 761pF @ 400V 18nC @ 10V 600V TO-220-3 Full Pack

SOT-23

IPAW60R280P7SXKSA1 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 18 Weeks
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Tube
Series CoolMOS™ P7
Published 2014
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 24W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 280m Ω @ 3.8A, 10V
Vgs(th) (Max) @ Id 4V @ 190μA
Input Capacitance (Ciss) (Max) @ Vds 761pF @ 400V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-220AB
Drain-source On Resistance-Max 0.28Ohm
Pulsed Drain Current-Max (IDM) 36A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 38 mJ
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.63000 $1.63
10 $1.44300 $14.43
450 $1.00111 $450.4995
900 $0.77294 $695.646
1,350 $0.69844 $0.69844
IPAW60R280P7SXKSA1 Product Details

IPAW60R280P7SXKSA1 Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 38 mJ.The maximum input capacitance of this device is 761pF @ 400V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.There is no pulsed drain current maximum for this device based on its rated peak drain current 36A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 600V.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IPAW60R280P7SXKSA1 Features


the avalanche energy rating (Eas) is 38 mJ
based on its rated peak drain current 36A.
a 600V drain to source voltage (Vdss)


IPAW60R280P7SXKSA1 Applications


There are a lot of Infineon Technologies
IPAW60R280P7SXKSA1 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

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