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IPAW60R600CEXKSA1

IPAW60R600CEXKSA1

IPAW60R600CEXKSA1

Infineon Technologies

MOSFET (Metal Oxide) N-Channel Tube 600m Ω @ 2.4A, 10V ±20V 444pF @ 100V 20.5nC @ 10V 600V TO-220-3 Full Pack

SOT-23

IPAW60R600CEXKSA1 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 18 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Tube
Series CoolMOS™
Published 2013
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 28W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 600m Ω @ 2.4A, 10V
Vgs(th) (Max) @ Id 3.5V @ 200μA
Input Capacitance (Ciss) (Max) @ Vds 444pF @ 100V
Current - Continuous Drain (Id) @ 25°C 10.3A Tc
Gate Charge (Qg) (Max) @ Vgs 20.5nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 10.3A
Threshold Voltage 3V
JEDEC-95 Code TO-220AB
Drain-source On Resistance-Max 0.6Ohm
Pulsed Drain Current-Max (IDM) 19A
DS Breakdown Voltage-Min 600V
FET Feature Super Junction
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.18000 $1.18
10 $1.04100 $10.41
450 $0.72204 $324.918
900 $0.55748 $501.732
1,350 $0.50375 $0.50375
IPAW60R600CEXKSA1 Product Details

IPAW60R600CEXKSA1 Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 444pF @ 100V.This device conducts a continuous drain current (ID) of 10.3A, which is the maximum continuous current transistor can conduct.Pulsed drain current is maximum rated peak drain current 19A.Activation of any electrical operation happens at threshold voltage, and this transistor has 3V threshold voltage.A normal operation of the DS requires keeping the breakdown voltage above 600V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IPAW60R600CEXKSA1 Features


a continuous drain current (ID) of 10.3A
based on its rated peak drain current 19A.
a threshold voltage of 3V
a 600V drain to source voltage (Vdss)


IPAW60R600CEXKSA1 Applications


There are a lot of Infineon Technologies
IPAW60R600CEXKSA1 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching

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