IPB017N10N5ATMA1

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IPB017N10N5ATMA1

Manufacturer part number:IPB017N10N5ATMA1

Manufacturer:Infineon Technologies

Description:IPB017N10N5ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IPB017N10N5ATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-7, D2Pak (6 Leads + Tab)
Number of Pins	7
Weight	1.59999g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2004
Series	OptiMOS™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G6
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	375W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	375W
Case Connection	DRAIN
Turn On Delay Time	33 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.7m Ω @ 100A, 10V
Vgs(th) (Max) @ Id	3.8V @ 279μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	15600pF @ 50V
Current - Continuous Drain (Id) @ 25°C	180A Tc
Gate Charge (Qg) (Max) @ Vgs	210nC @ 10V
Rise Time	23ns
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	27 ns
Turn-Off Delay Time	80 ns
Continuous Drain Current (ID)	273A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	100V
Drain to Source Breakdown Voltage	100V
Max Junction Temperature (Tj)	175°C
Height	4.5mm
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead