IPB025N10N3GE8187ATMA1

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Manufacturer part number:IPB025N10N3GE8187ATMA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 100V 180A TO263-7

Case Package:SOT-23

Datasheet:IPB025N10N3GE8187ATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-263-7, D2Pak (6 Leads + Tab)
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Series	OptiMOS™
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	300W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	2.5m Ω @ 100A, 10V
Vgs(th) (Max) @ Id	3.5V @ 275μA
Input Capacitance (Ciss) (Max) @ Vds	14800pF @ 50V
Current - Continuous Drain (Id) @ 25°C	180A
Gate Charge (Qg) (Max) @ Vgs	206nC @ 10V
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
RoHS Status	ROHS3 Compliant