IPB031NE7N3GATMA1

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Manufacturer part number:IPB031NE7N3GATMA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 75V 100A 3-Pin(2+Tab) TO-263

Case Package:SOT-23

Datasheet:IPB031NE7N3GATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	OptiMOS™
JESD-609 Code	e3
Pbfree Code	no
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	214W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	214W
Case Connection	DRAIN
Turn On Delay Time	16 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.1m Ω @ 100A, 10V
Vgs(th) (Max) @ Id	3.8V @ 155μA
Input Capacitance (Ciss) (Max) @ Vds	8130pF @ 37.5V
Current - Continuous Drain (Id) @ 25°C	100A Tc
Gate Charge (Qg) (Max) @ Vgs	117nC @ 10V
Rise Time	85ns
Drain to Source Voltage (Vdss)	75V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	40 ns
Continuous Drain Current (ID)	100A
Gate to Source Voltage (Vgs)	20V
Pulsed Drain Current-Max (IDM)	400A
DS Breakdown Voltage-Min	75V
Avalanche Energy Rating (Eas)	640 mJ
RoHS Status	ROHS3 Compliant