TP0610K-T1-GE3

new-10%

Manufacturer part number:TP0610K-T1-GE3

Manufacturer:Vishay Siliconix

Description:VISHAY - TP0610K-T1-GE3 - MOSFET-Transistor, p-Kanal, -185 mA, -60 V, 10 ohm, -4.5 V, -2 V

Case Package:SOT-23

Datasheet:TP0610K-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Supplier Device Package	SOT-23-3 (TO-236)
Weight	1.437803g
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	350mW Ta
Element Configuration	Single
Power Dissipation	350mW
Turn On Delay Time	20 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	23pF @ 25V
Current - Continuous Drain (Id) @ 25°C	185mA Ta
Gate Charge (Qg) (Max) @ Vgs	1.7nC @ 15V
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Turn-Off Delay Time	35 ns
Continuous Drain Current (ID)	-185mA
Threshold Voltage	-2V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	-60V
Input Capacitance	155pF
Drain to Source Resistance	10Ohm
Rds On Max	190 mΩ
Nominal Vgs	-1 V
Height	1.02mm
Length	3.04mm
Width	1.4mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free