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FDB15N50

  • FDB15N50
  • FDB15N50

FDB15N50

FDB15N50

ON Semiconductor

FDB15N50 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDB15N50 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 1.31247g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2003
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 380mOhm
Subcategory FET General Purpose Power
Voltage - Rated DC 500V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Current Rating 15A
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 300W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
Turn On Delay Time 9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 380m Ω @ 7.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1850pF @ 25V
Current - Continuous Drain (Id) @ 25°C 15A Tc
Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V
Rise Time 5.4ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 5 ns
Turn-Off Delay Time 26 ns
Continuous Drain Current (ID) 15A
Threshold Voltage 3.4V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 60A
Avalanche Energy Rating (Eas) 760 mJ
Nominal Vgs 3.4 V
Height 4.83mm
Length 10.67mm
Width 11.33mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
800 $1.76506 $1412.048
1,600 $1.65347 $1.65347
2,400 $1.57536 $3.15072
5,600 $1.51957 $7.59785
FDB15N50 Product Details

FDB15N50 Description


UniFETTM:MOSFET is a high voltage MOSFET series based on flat stripe and DMOS technology. The MOSFET is designed to reduce on-resistance and provide better switching performance and higher avalanche energy intensity. The device family is suitable for switching power supply converter applications such as power factor correction (PFC), flat panel display (FPD) TV power supplies, ATX and electronic lamp ballasts.

 



FDB15N50  Features

 

Low gate charge Qg results in simple drive requirement ( Typ. 33nC)

Improved Gate, avalanche and high reapplied dv/dt ruggedness

Reduced RDS(on) ( 330m? ( Typ.)@ VGS = 10V, ID = 7.5A)

Reduced Miller capacitance and low Input capacitance ( Typ. Crss = 16pF)

Improved switching speed with low EMI

175oC rated junction temperature

 

FDB15N50  Applications


This product is general usage and suitable for many different applications.

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