RQ3E180AJTB Overview

Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 24.6 mJ.A device's maximal input capacitance is 4290pF @ 15V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 30A, which represents the maximum continuous current it can conduct.In terms of pulsed drain current, it has a maximum of 72A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 30V.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (2.5V 4.5V).

RQ3E180AJTB Features

the avalanche energy rating (Eas) is 24.6 mJ
a continuous drain current (ID) of 30A
based on its rated peak drain current 72A.
a 30V drain to source voltage (Vdss)

RQ3E180AJTB Applications

There are a lot of ROHM Semiconductor
RQ3E180AJTB applications of single MOSFETs transistors.

• Consumer Appliances
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples