IPB039N10N3GE8187ATMA1

new-10%

Manufacturer part number:IPB039N10N3GE8187ATMA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 100V 160A TO263-7

Case Package:SOT-23

Datasheet:IPB039N10N3GE8187ATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	OptiMOS™
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
JESD-30 Code	R-PSSO-G6
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	214W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.9m Ω @ 100A, 10V
Vgs(th) (Max) @ Id	3.5V @ 160μA
Input Capacitance (Ciss) (Max) @ Vds	8410pF @ 50V
Current - Continuous Drain (Id) @ 25°C	160A Tc
Gate Charge (Qg) (Max) @ Vgs	117nC @ 10V
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	160A
JEDEC-95 Code	TO-263AA
Drain-source On Resistance-Max	0.0039Ohm
Pulsed Drain Current-Max (IDM)	640A
DS Breakdown Voltage-Min	100V
Avalanche Energy Rating (Eas)	340 mJ
RoHS Status	ROHS3 Compliant