IPB048N15N5ATMA1

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IPB048N15N5ATMA1

Manufacturer part number:IPB048N15N5ATMA1

Manufacturer:Infineon Technologies

Description:MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 4.8m Ω @ 60A, 10V ±20V 7800pF @ 75V 100nC @ 10V 150V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Case Package:SOT-23

Datasheet:IPB048N15N5ATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Series	OptiMOS™
Published	2013
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	300W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4.8m Ω @ 60A, 10V
Vgs(th) (Max) @ Id	4.6V @ 264μA
Input Capacitance (Ciss) (Max) @ Vds	7800pF @ 75V
Current - Continuous Drain (Id) @ 25°C	120A Tc
Gate Charge (Qg) (Max) @ Vgs	100nC @ 10V
Drain to Source Voltage (Vdss)	150V
Drive Voltage (Max Rds On,Min Rds On)	8V 10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	120A
Drain-source On Resistance-Max	0.0048Ohm
Pulsed Drain Current-Max (IDM)	480A
DS Breakdown Voltage-Min	150V
Avalanche Energy Rating (Eas)	230 mJ
RoHS Status	ROHS3 Compliant