IPB048N15N5ATMA1 is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a drain to source voltage of 150V. The operating temperature of the IPB048N15N5ATMA1 is -55??C~175??C TJ and its maximum power dissipation is 300W Tc. IPB048N15N5ATMA1 has 2 pins and it is available in Tape & Reel (TR) packaging way.
IPB048N15N5ATMA1 Features
Excellent gate charge xRDS(on) product(FOM)
Very lowon-resistance RDS(on)
Very low reverse recovery charge(Qrr)
175??C operating temperature
Pb-free lead plating;RoHS compliant
Qualified according to JEDEC1) for target application
Ideal for high-frequency switching and synchronous rectification
Halogen-free according to IEC61249-2-21
IPB048N15N5ATMA1 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
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