IPB100N04S2L03ATMA2 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 810 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 6000pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.In this device, the drain-source breakdown voltage is 40V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Turn-Off delay time?is?the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 77 ns.IDM is the?maximum rated peak drain current?for a power MOSFET, and its maximal pulsed drain current is 400A.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 19 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Single MOSFETs transistor supports the maximum dual supply voltage when powered by 40V.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
IPB100N04S2L03ATMA2 Features
the avalanche energy rating (Eas) is 810 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 77 ns
based on its rated peak drain current 400A.
IPB100N04S2L03ATMA2 Applications
There are a lot of Infineon Technologies IPB100N04S2L03ATMA2 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
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- Micro Solar Inverter
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- Solar Inverter
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- Synchronous Rectification
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- Battery Protection Circuit
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- Server power supplies
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- LCD/LED/ PDP TV Lighting
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- General Purpose Interfacing Switch
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- AC-DC Power Supply
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- Lighting
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