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IPB120N08S404ATMA1

IPB120N08S404ATMA1

IPB120N08S404ATMA1

Infineon Technologies

Mosfet N-channel 75/80V

SOT-23

IPB120N08S404ATMA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series Automotive, AEC-Q101, OptiMOS™
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 179W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.1m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 120μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 6450pF @ 25V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 95nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 120A
Max Dual Supply Voltage 80V
Drain-source On Resistance-Max 0.0041Ohm
Pulsed Drain Current-Max (IDM) 480A
Avalanche Energy Rating (Eas) 310 mJ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $4.299903 $4.299903
10 $4.056512 $40.56512
100 $3.826898 $382.6898
500 $3.610282 $1805.141
1000 $3.405926 $3405.926

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