IPB240N03S4LR8ATMA1

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IPB240N03S4LR8ATMA1

Manufacturer part number:IPB240N03S4LR8ATMA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH TO263-7

Case Package:SOT-23

Datasheet:IPB240N03S4LR8ATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-7, D2Pak (6 Leads + Tab)
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	Automotive, AEC-Q101, OptiMOS™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	ULTRA LOW RESISTANCE
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G6
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	300W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300W
Case Connection	DRAIN
Turn On Delay Time	29 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	0.76m Ω @ 100A, 10V
Vgs(th) (Max) @ Id	2.2V @ 230μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	26000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	240A Tc
Gate Charge (Qg) (Max) @ Vgs	380nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
Turn-Off Delay Time	142 ns
Continuous Drain Current (ID)	240A
Gate to Source Voltage (Vgs)	16V
Max Dual Supply Voltage	30V
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	960A
Avalanche Energy Rating (Eas)	945 mJ
Max Junction Temperature (Tj)	175°C
Height	4.5mm
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead