IPB50R199CPATMA1

new-10%

Manufacturer part number:IPB50R199CPATMA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 550V 17A TO-263

Case Package:SOT-23

Datasheet:IPB50R199CPATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	CoolMOS™
JESD-609 Code	e3
Pbfree Code	no
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Pin Count	4
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	139W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	139W
Case Connection	DRAIN
Turn On Delay Time	35 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	199m Ω @ 9.9A, 10V
Vgs(th) (Max) @ Id	3.5V @ 660μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	1800pF @ 100V
Current - Continuous Drain (Id) @ 25°C	17A Tc
Gate Charge (Qg) (Max) @ Vgs	45nC @ 10V
Rise Time	14ns
Drain to Source Voltage (Vdss)	550V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	80 ns
Continuous Drain Current (ID)	17A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	500V
Pulsed Drain Current-Max (IDM)	40A
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead