IPB65R280C6ATMA1

new-10%

Manufacturer part number:IPB65R280C6ATMA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 650V 13.8A 3-Pin(2+Tab) TO-263

Case Package:SOT-23

Datasheet:IPB65R280C6ATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	CoolMOS™
JESD-609 Code	e3
Pbfree Code	no
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	104W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	104W
Case Connection	DRAIN
Turn On Delay Time	13 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	280m Ω @ 4.4A, 10V
Vgs(th) (Max) @ Id	3.5V @ 440μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	950pF @ 100V
Current - Continuous Drain (Id) @ 25°C	13.8A Tc
Gate Charge (Qg) (Max) @ Vgs	45nC @ 10V
Rise Time	11ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	12 ns
Turn-Off Delay Time	105 ns
Continuous Drain Current (ID)	13.8A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	650V
Drain-source On Resistance-Max	0.28Ohm
Pulsed Drain Current-Max (IDM)	39A
Avalanche Energy Rating (Eas)	290 mJ
RoHS Status	RoHS Compliant
Lead Free	Contains Lead