SI9424BDY-T1-GE3

new-10%

Manufacturer part number:SI9424BDY-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 20V 5.6A 8SOIC

Case Package:SOT-23

Datasheet:SI9424BDY-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	8
Number of Elements	1
Power Dissipation-Max	1.25W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.25W
Turn On Delay Time	30 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	25m Ω @ 7.1A, 4.5V
Vgs(th) (Max) @ Id	850mV @ 250μA
Current - Continuous Drain (Id) @ 25°C	5.6A Ta
Gate Charge (Qg) (Max) @ Vgs	40nC @ 4.5V
Rise Time	40ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±9V
Fall Time (Typ)	70 ns
Turn-Off Delay Time	130 ns
Continuous Drain Current (ID)	-7.1A
Threshold Voltage	-450mV
Gate to Source Voltage (Vgs)	9V
Drain Current-Max (Abs) (ID)	5.6A
Drain-source On Resistance-Max	0.025Ohm
Drain to Source Breakdown Voltage	-20V
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant