IPB70N10S3L12ATMA1

new-10%

Manufacturer part number:IPB70N10S3L12ATMA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 100V 70A 3-Pin(2+Tab) TO-263

Case Package:SOT-23

Datasheet:IPB70N10S3L12ATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2012
Series	OptiMOS™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Additional Feature	LOGIC LEVEL COMPATIBLE
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	125W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	11.8m Ω @ 70A, 10V
Vgs(th) (Max) @ Id	2.4V @ 83μA
Input Capacitance (Ciss) (Max) @ Vds	5550pF @ 25V
Current - Continuous Drain (Id) @ 25°C	70A Tc
Gate Charge (Qg) (Max) @ Vgs	80nC @ 10V
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	70A
Drain-source On Resistance-Max	0.012Ohm
Pulsed Drain Current-Max (IDM)	280A
DS Breakdown Voltage-Min	100V
Avalanche Energy Rating (Eas)	154 mJ
RoHS Status	ROHS3 Compliant