FQPF12P10 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FQPF12P10 Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Supplier Device Package
TO-220F
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2002
Series
QFET®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
38W Tc
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
290mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
800pF @ 25V
Current - Continuous Drain (Id) @ 25°C
8.2A Tc
Gate Charge (Qg) (Max) @ Vgs
27nC @ 10V
Drain to Source Voltage (Vdss)
100V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.53000
$0.53
500
$0.5247
$262.35
1000
$0.5194
$519.4
1500
$0.5141
$771.15
2000
$0.5088
$1017.6
2500
$0.5035
$1258.75
FQPF12P10 Product Details
FQPF12P10 Description
FQPF12P10 is a type of P-Channel QFET? MOSFET provided by ON Semiconductor based on the proprietary, planar stripe, DMOS technology. It is able to provide low on-state resistance and superior switching performance and withstand high energy pulse in the avalanche and commutation mode. It is ideally suitable for low voltage applications such as audio amplifiers, high-efficiency switching DC/DC converters, and DC motor control.