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FQPF12P10

FQPF12P10

FQPF12P10

ON Semiconductor

FQPF12P10 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FQPF12P10 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Supplier Device Package TO-220F
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2002
Series QFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 38W Tc
FET Type P-Channel
Rds On (Max) @ Id, Vgs 290mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 800pF @ 25V
Current - Continuous Drain (Id) @ 25°C 8.2A Tc
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.53000 $0.53
500 $0.5247 $262.35
1000 $0.5194 $519.4
1500 $0.5141 $771.15
2000 $0.5088 $1017.6
2500 $0.5035 $1258.75
FQPF12P10 Product Details

FQPF12P10 Description


FQPF12P10 is a type of P-Channel QFET? MOSFET provided by ON Semiconductor based on the proprietary, planar stripe, DMOS technology.  It is able to provide low on-state resistance and superior switching performance and withstand high energy pulse in the avalanche and commutation mode. It is ideally suitable for low voltage applications such as audio amplifiers, high-efficiency switching DC/DC converters, and DC motor control.



FQPF12P10 Features


  • Low gate charge

  • Low on-state resistance

  • Superior switching performance

  • Improved dv/dt capability

  • Available in the TO-220F package



FQPF12P10 Applications


  • Audio amplifier

  • DC motor control

  • High-efficiency switching DC/DC converters


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