IPB80N06S2L11ATMA1

new-10%

Manufacturer part number:IPB80N06S2L11ATMA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 55V 80A TO263-3

Case Package:SOT-23

Datasheet:IPB80N06S2L11ATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2010
Series	OptiMOS™
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Additional Feature	LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	158W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	10.7m Ω @ 60A, 10V
Vgs(th) (Max) @ Id	2V @ 93μA
Input Capacitance (Ciss) (Max) @ Vds	2075pF @ 25V
Current - Continuous Drain (Id) @ 25°C	80A Tc
Gate Charge (Qg) (Max) @ Vgs	80nC @ 10V
Drain to Source Voltage (Vdss)	55V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	80A
Drain-source On Resistance-Max	0.0147Ohm
Pulsed Drain Current-Max (IDM)	320A
DS Breakdown Voltage-Min	55V
Avalanche Energy Rating (Eas)	280 mJ
RoHS Status	ROHS3 Compliant