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IPC80N04S403ATMA1

IPC80N04S403ATMA1

IPC80N04S403ATMA1

Infineon Technologies

MOSFET N-CH 8TDSON

SOT-23

IPC80N04S403ATMA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series Automotive, AEC-Q101, OptiMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 100W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.3m Ω @ 40A, 10V
Vgs(th) (Max) @ Id 4V @ 60μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 5720pF @ 25V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 71nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 80A
Max Dual Supply Voltage 40V
Drain-source On Resistance-Max 0.0033Ohm
Pulsed Drain Current-Max (IDM) 320A
Avalanche Energy Rating (Eas) 215 mJ
RoHS Status RoHS Compliant
Lead Free Contains Lead

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