IPC90N04S5L3R3ATMA1

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IPC90N04S5L3R3ATMA1

Manufacturer part number:IPC90N04S5L3R3ATMA1

Manufacturer:Infineon Technologies

Description:IPC90N04S5L3R3ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IPC90N04S5L3R3ATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	Automotive, AEC-Q101, OptiMOS™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PDSO-F3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	62W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	3.3m Ω @ 45A, 10V
Vgs(th) (Max) @ Id	2V @ 23μA
Input Capacitance (Ciss) (Max) @ Vds	2145pF @ 25V
Current - Continuous Drain (Id) @ 25°C	90A Tc
Gate Charge (Qg) (Max) @ Vgs	40nC @ 10V
Drain to Source Voltage (Vdss)	40V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
Drain Current-Max (Abs) (ID)	90A
Drain-source On Resistance-Max	0.0047Ohm
Pulsed Drain Current-Max (IDM)	360A
DS Breakdown Voltage-Min	40V
Avalanche Energy Rating (Eas)	40 mJ
RoHS Status	ROHS3 Compliant