IPD122N10N3GATMA1

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IPD122N10N3GATMA1

Manufacturer part number:IPD122N10N3GATMA1

Manufacturer:Infineon Technologies

Description:IPD122N10N3GATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IPD122N10N3GATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	OptiMOS™
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	94W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	12.2m Ω @ 46A, 10V
Vgs(th) (Max) @ Id	3.5V @ 46μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	2500pF @ 50V
Current - Continuous Drain (Id) @ 25°C	59A Tc
Gate Charge (Qg) (Max) @ Vgs	35nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	59A
JEDEC-95 Code	TO-252AA
Max Dual Supply Voltage	100V
Drain-source On Resistance-Max	0.0122Ohm
Avalanche Energy Rating (Eas)	70 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead