IXFN230N10

new-10%

Manufacturer part number:IXFN230N10

Manufacturer:IXYS

Description:MOSFET N-CH 100V 230A SOT-227B

Case Package:SOT-23

Datasheet:IXFN230N10 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
Termination	Screw
ECCN Code	EAR99
Resistance	6mOhm
Terminal Finish	Nickel (Ni)
Additional Feature	AVALANCHE RATED, UL RECOGNIZED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Pin Count	4
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	700W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	700W
Case Connection	ISOLATED
Turn On Delay Time	40 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	6m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	4V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds	19000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	230A Tc
Gate Charge (Qg) (Max) @ Vgs	570nC @ 10V
Rise Time	150ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	60 ns
Turn-Off Delay Time	112 ns
Continuous Drain Current (ID)	230A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	920A
Dual Supply Voltage	100V
Recovery Time	250 ns
Nominal Vgs	4 V
Height	9.6mm
Length	38.23mm
Width	25.42mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free